Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN
نویسندگان
چکیده
Rights: © 2011 American Physical Society (APS). This is the accepted version of the following article: Rauch, Christian & Makkonen, Ilja & Tuomisto, Filip. 2011. Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN. Physical Review B. Volume 84, Issue 12. 125201/1-9. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.125201, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.84.125201.
منابع مشابه
Positron annihilation lifetime spectroscopy in nickel ferrite and iron oxide nanopowders
In this study, a positron annihilation lifetime spectrometer was set up and its resolution was optimized. The spectrometer is a fast-slow arrangement with time resolution of 250 ps. To obtain lifetime components and their intensities from analyzing positron annihilation lifetime spectrum, the Pascual software is used. Positrons are from a source of radioactive 22NaCl with 20 μCi activity enclos...
متن کاملIdentification of vacancy defect complexes in transparent semiconducting oxides: the cases of ZnO, In2O3 and SnO2
Positron annihilation spectroscopy, when combined with highquality supporting modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment aroun...
متن کاملDefect studies in n-type indium nitride
Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Christian Rauch Name of the doctoral dissertation Defect studies in n-type indium nitride Publisher School of Science Unit Department of Applied Physics Series Aalto University publication series DOCTORAL DISSERTATIONS 52/2012 Field of research Engineering Physics, Physics Manuscript submitted 28 February 2012 Manuscript revis...
متن کاملFluorine-vacancy complexes in ultrashallow B-implanted Si
Shallow fluorine-vacancy FV complexes in Si have been directly observed using variable-energy positron annihilation spectroscopy and secondary ion mass spectrometry. The FV complexes, introduced to combat the deactivation and transient-enhanced diffusion of ultrashallow boron, were observed in preamorphized Si wafers implanted with 0.5 keV B and 10 keV F ions at a dose of 1015 cm−2, and then an...
متن کاملPositron Spectroscopy of Defects in Semiconductors
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes observable changes in annihilation characteristics: the positron lifetime increases and the positron-electron momentum distribution narrows. Positron trapping in semiconductors is analogous to carrier capture. Due to the long-range Coulomb interaction, the charge state of a vacancy has a strong ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015